Chemical mechanical polishing (or planarization), is critical, very costly, and challenging nano polishing process that combines chemical reactions and mechanical abrasion.
Polishing is done with a slurry that includes an oxidizing agent, typically hydrogen peroxide H2O2. CMP slurries are mixed or diluted at plant before usage. The correct blend is essential as it is directly linked to chemical reaction rates and wafer polishing rate.
Using a Vaisala K-PATENTS® semicon refractometer for measuring CMP slurries’ concentration is essential to achieve proper CMP performance without surface scratching.
Vaisala K-PATENTS® semicon refractometer:
Vaisala’s application note explains how a semicon refractometer can improve process with recommended installation points for best performance.
Download the application note (PDF) by filling the form.
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